IIST - 2nd Year - Electronic Devices and Circuits
Syllabus UNIT 1: Semiconductor devices Semiconductor devices, theory of P-N junction, temperature dependence and break down characteristics, junction capacitances. Zener diode, Varactor diode, PIN diode, LED, Photo diode, Transistors BJT, FET, MOSFET, types, working principal, characteristics, and region of operation, load line biasing method. Transistor as an amplifier, gain, bandwidth, frequency response, Type of amplifier. UNIT 2: Feedback amplifier Feedback amplifier, negative feedback, voltage-series, voltage shunt, current series and current shunt feedback, Sinusoidal oscillators, L-C (Hartley-Colpitts) oscillators, RC phase shift, Wien bridge, and Crystal oscillators. Power amplifiers, class A, class B, class A B, C amplifiers, their efficiency and power Dissipation. UNIT 3: Switching characteristics of diode Switching characteristics of diode and transistor turn ON, OFF time, reverse recovery time, transistor as switch, Multivibrators, Bistable, Monostable, Astable mult...